River Publishers Series in Electronic Materials and Devices Series Read Description

Radiation Hardening by Design (RHBD) Analog Integrated Circuits

July 2022
More details
  • Publisher
    River Publishers
  • ISBN 9788770224192
  • Language English
  • Pages 300 pp.
  • Size 6" x 9"
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July 2022
More details
  • Publisher
    River Publishers
  • ISBN 9788770224185
  • Language English
  • Pages 300 pp.
  • Size 6" x 9"

The book is intended for researchers and professionals interested in understanding how to design and make a preliminary characterization of Radiation Hardened (rad-hard) analog and mixed-signal circuits, exploiting standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.

It starts with an introductory overview of the effects of radiation in space and harsh environments with a specific focus on analog circuits to enable the reader to understand why specific design solutions are adopted to mitigate hard/soft errors. The following four chapters are devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components applied to Operational Amplifiers, Voltage References, Analog-to-Digital (ADC) and Digital-to-Analog (DAC) converters. Each chapter is organized with a first part which recalls the basic working principles of such circuit and a second part which describes the main RHBD techniques proposed in the literature to make them resilient to radiation. The approach follows a top-down scheme starting from RHBD at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and finishing at layout level (how to shape a layout to mitigate radiation effects).

The sixth chapter is devoted to a special class of analog circuit, the dosimeters, which are gaining importance in space, health and nuclear applications. By leveraging the characteristic of a Flash-memory cell, a re-usable dosimeter is described which includes the sensitive element itself, the analog interface and the process of characterization.

The last chapter is an overview of the strategies adopted for the testing of analog and mixed-signal circuits. In particular, it will focus also on the measurement campaigns performed by the authors aiming for the characterization of developed rad-hard components under total dose (TID) and single-events (SEE).

Technical topics discussed in the book include:

  • Radiation effects on semiconductor components (TID, SEE)
  • Radiation Hardening by Design (RHBD) Techniques
  • Rad-hard Operational Amplifiers
  • Rad-hard Voltage References
  • Rad-hard ADC
  • Rad-hard DAC
  • Rad-hard Special Circuits
  • Testing Strategies

List of Figures
List of Tables
List of Abbreviations
1. Space Radiation Effects and General RHBD Techniques
2. Rad-Hard Operational Amplifiers
3. Rad-Hard Voltage References
4. Rad-Hard Analog-to-Digital Converters
5. Rad-Hard Digital-to-Analog Converters
6. Special Rad-Hard Analog Circuits (Dosimeters)
7. Strategies for Testing Analog ICs under Radiation

Umberto Gatti

Dr. Umberto Gatti received the Laurea and his Ph.D. in Electronics Engineering from the University of Pavia in 1987 and 1992, respectively. From 1993 to 1999, he worked in the R&D Lab of Italtel, as ASIC Designer, being involved in modeling analog ICs. In 1999, he joined the Development Technologies Lab of Siemens, where he was Sr. Design ASIC Engineer. Besides developing telecom ICs, he was the coordinator of Eureka-Medea+ projects focused on high-speed sigma-delta converters. In 2008, he moved to Nokia Siemens Networks where he worked as Sr. Power Supply Architect. Since 2012 he is with RedCat Devices as member of the Executive Staff and also holds cooperation with the University of Pavia. During his career, he was involved in the design of data-converters, broadband wireless transceivers, Hall sensors micro-systems and power supply architectures. His current research interests are in the area of rad-hard CMOS ICs, particularly rad-hard libraries and memories (SRAMs and OTP), rad-hard mixed-signal circuits (ADC-DAC), dosimeters, and in testing such components. He holds 2 international patents and is co-author of about 60 papers, one book and book chapters. He is Senior Member of IEEE and serves also as reviewer for magazines and conferences.

Cristiano Calligaro

Cristiano Calligaro received his laurea degree in Electronic Engineering and Ph.D. in Electronics and Information Engineering from the University of Pavia, Italy in 1992 and 1997 respectively. After obtaining his Ph.D. he moved to MAPP Technology. In 2006 he established RedCat Devices as a start-up. During his career he has been involved in memory design (volatile and non-volatile) both for consumer application (multilevel flash memories) and space applications (rad-hard memories) and software design for SEE evaluation using free open-source CAD tools. His current research interest is focused on rad-hard libraries to be used for rad-hard mixed signal ASICs, stand-alone memories (SRAMs and NVMs) and testing methodologies for rad-hard components. He holds 20 patents mainly in the field of multilevel NVMs and is co-author of more than 50 papers and one book (Rad-hard Semiconductor Memories, River Publishers). He has been coordinator of RAMSES and ATENA projects inside the Italy-Israel Cooperation Program, SkyFlash project in the European FP7 Program, and EuroSRAM4Space project in the Eureka Eurostars Program. In 2019 he co-founded BlackCat Beyond as a start-up company focusing on silicon dosimeters for medical applications and RCD Semiconductors as a company focused on the development of silicon components for deep space missions. He is an IEEE Senior Member and Eureka Euripides reviewer.

Rad-Hard Integrated Circuits Design; Radiation-Hardened by Design Techniques; Microelectronics for Harsh Environments; Analog and Mixed-Signal Integrated Circuits; ADC/DAC; Operational Amplifiers